概述
数据手册IPT0408-25F 概述
High current density due to double mesa technology
IPT0408-25F 数据手册
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IPT0408-xxF
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT0408-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT0408-xx series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads..
The TO-220F isolated mounting base, they provides
1500V RMS isolation voltage.
TO-220F
MAIN FEATURES
Symbol
IT(RMS)
Value
4
Unit
A
VDRM / VRRM
IGT
800
V
≤ 50
mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
V
A
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
RMS on–state current
Tc =105℃
IT(RMS)
4
(Full sine wave)
Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms
33
30
ITSM
A
(full cycle, Tj = 25℃)
I²t Value for fusing
Peak gate current
f = 50 Hz t = 20ms
I²t
4.5
A²s
tp = 10ms
IGM
PGM
1
A
W
W
tp = 20us, Tj = 125 ℃
Tj = 125 ℃
Peake gate power dissipation
Average gate power dissipation
1.5
0.1
Tj = 125 ℃
PG(AV)
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPT0408-xxF
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Rating
TYP
Symbol
Test Condition
Quadrant
Unit
MIN
MAX
50
IGT
T2+G+/T2+G-/T2-G-
T2+G+/T2+G-/T2-G-
18-25
mA
V
VD = 12V RL = 30Ω
VGT
1.5
VD=VDRM, RL=3.3KΩ,
Tj = 125 ℃
VGD
0.2
V
T2+ G+
T2+ G-
60
70
60
50
IL
IG = 1.2 IGT
IT = 100mA
mA
T2- G-
IH
T2+G+/T2+G-/T2-G-
mA
dV/dt
VD = 67% VDRM gate open Tj = 125 ℃
500
V/us
STATIC CHARACTERISTICS
Symbol
IDRM
Test Conditions
Value (MAX)
Unit
VD = VDRM
VR = VRRM
Tj = 25 ℃
10
1
uA
IRRM
Tj = 125 ℃
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case (AC)
3.5
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPT0408-xxF
PACKAGE MECHANICAL DATA
TO-220F
Dimensions
Ref
Millimeters
Inches
Typ
Min
4.4
0.74
0.5
2.4
2.6
8.8
9.7
6.4
5
Typ
Max
4.8
Min
0.173
0.029
0.020
0.094
0.102
0.346
0.382
0.252
0.197
11.0
Max
0.189
0.033
0.030
0.106
0.118
0.367
0.406
0.268
0.205
11.7
A
B
0.8
0.83
0.75
2.7
0.031
C
C2
C3
D
3
9.3
E
10.3
6.8
F
G
5.2
H
28.0
29.8
L1
L2
L3
V1
3.63
0.143
1.14
1.7
0.044
0.067
3.3
40º
0.130
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com
3
IPT0408-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
IPT0408-25F 相关器件
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| IPT0408-35A | IPS | High current density due to double mesa technology | 获取价格 |
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| IPT0408-35B | IPS | High current density due to double mesa technology | 获取价格 |
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| IPT0408-35D | IPS | High current density due to double mesa technology | 获取价格 |
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| IPT0408-35I | IPS | High current density due to double mesa technology | 获取价格 |
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| IPT044N15N5 | INFINEON | 英飞凌无引脚 TO 封装型 OptiMOS™ 功率 MOSFET 针对大电流应用进行优化，如叉车、轻型电动车 (LEV)、电动工具、负载点 (POL)、电信和电熔丝。此外，封装尺寸缩小了 60%，设计更为紧凑。相较于 D²PAK 7 引脚封装，无引脚 TO 封装尺寸大幅减少了 30%。同时封装高度也降低了 50%，在机架式或刀片服务器等空间狭小的应用中表现出显著优势。 | 获取价格 |
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| IPT04Q06-AEA | IPS | High current density due to double mesa technology | 获取价格 |
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| IPT04Q06-AEB | IPS | High current density due to double mesa technology | 获取价格 |
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| IPT04Q06-AED | IPS | High current density due to double mesa technology | 获取价格 |
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