IPT0806-10A [IPS]
High current density due to double mesa technology; 高的电流密度，由于增加一倍台面技术
| 型号： | IPT0806-10A |
| 厂家： | 
IP SEMICONDUCTOR CO., LTD. |
| 描述： | High current density due to double mesa technology |
| 文件： | 总4页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IP Semiconductor Co., Ltd.
IPT0806-xxA
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT0806-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT0806-xx series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads..
The IPT0806-xxA series are 2500V RMS insulating voltage.
(TO-220A)
MAIN FEATURES
Symbol
IT(RMS)
Value
8
Unit
A
VDRM / VRRM
VTM
600
V
≤ 1.55
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +125
℃
V
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tc =95℃
VDRM
VRRM
600
600
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
VDSM
VRSM
700
700
V
RMS on–state current
IT(RMS)
8
A
(Full sine wave)
Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms
80
84
ITSM
A
(full cycle, Tj = 25℃)
f = 50 Hz t = 20ms
I²t
36
50
A²s
A/us
I²t Value for fusing
tp = 10ms
Critical Rate of rise of on-state current
dI / dt
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
IGM
4
1
A
Peak gate current
tp = 20us, Tj = 125 ℃
Tj = 125 ℃
Average gate power dissipation
PG(AV)
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPT0806-xxA
ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified)
IPT0806-xxA
Symbol
Test Condition
Quadrant
Unit
SE
10
CE
35
BE
50
IGT
I – II – III
I – II – III
MAX
MAX
mA
V
VD = 12V RL = 33Ω
VGT
1.3
VD=VDRM, RL=3.3KΩ,
Tj = 125 ℃
VGD
IL
I – II – III
MIN
0.2
V
I – III
25
30
15
40
5.4
2.8
-
50
60
35
500
-
70
80
50
1000
-
IG = 1.2 IGT
IT = 500mA
MAX
mA
II
IH
MAX
MIN
mA
dV/dt
VD = 67% VDRM gate open Tj = 125 ℃
(dV/dt) c=0.1V/us Tj = 125 ℃
(dV/dt) c=10V/us Tj = 125 ℃
Without snubber Tj = 125 ℃
V/us
(dI/dt)c
MIN
-
-
A/ms
4.5
7.0
STATIC CHARACTERISTICS
Symbol
VTM
Test Conditions
Value(MAX)
Unit
ITM = 17A, t p = 380uS
Tj = 125 ℃
Tj = 125 ℃
Tj = 125 ℃
1.55
5
V
IDRM
VD = VDRM
VR = VRRM
uA
mA
IRRM
1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case (AC)
2.5
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPT0806-xxA
PACKAGE MECHANICAL DATA
TO-220A
Millimeters
Min
4.4
Typ
Max
4.6
A
B
0.61
0.46
1.23
2.4
0.88
0.70
1.32
2.72
9.7
C
C2
C3
D
8.6
E
9.8
10.4
6.6
F
6.2
G
4.8
5.4
H
28
29.8
L1
L2
L3
V
3.75
40º
1.14
2.65
1.7
2.95
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPT0806-xxA
IPT0806-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
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