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2N6788 [IRF]

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A); 功率MOSFET N沟道（ BVDSS = 100V ， RDS（ON） = 0.30ohm ，ID = 6.0A ）
2N6788
元器件型号： 2N6788
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)
功率MOSFET N沟道（ BVDSS = 100V ， RDS（ON） = 0.30ohm ，ID = 6.0A ）
PDF文件： 总6页 (文件大小：204K)
下载文档：  下载PDF数据表文档文件
型号参数：2N6788参数
 查看货源

2N6788E

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

2N6788E3

 Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, ROHS COMPLIANT, HERMETIC SEALED, FORMERLY TO-39, 3 PIN

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0 MICROSEMI

2N6788EA

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

2N6788EB

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

2N6788EC

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

2N6788ED

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

2N6788L

 N-Channel MOSFET

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10 SEME-LAB

2N6788L

 N-Channel

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27 ETC

2N6788LCC4

 N-CHANNEL POWER MOSFET ENHANCEMENT MODE

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14 SEME-LAB

2N6788U

 N-CHANNEL MOSFET

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14 MICROSEMI

2N6789

 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39

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76 ETC

2N6789

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 INFINEON

2N678A

 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 15A I(C) | TO-3

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10 ETC

2N678B

 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 15A I(C) | TO-3

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9 ETC

2N678C

 TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 15A I(C) | TO-3

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14 ETC
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