30BQ100G

更新时间:2024-09-18 05:28:41
品牌:INFINEON
描述:SCHOTTKY RECTIFIER

30BQ100G 概述

SCHOTTKY RECTIFIER 肖特基整流器器

30BQ100G 数据手册

通过下载30BQ100G数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Final PD-20805 rev. A 01/07  
30BQ100G  
SCHOTTKY RECTIFIER  
3 Amp  
IF(AV) = 3.0Amp  
VR = 100V  
Description/ Features  
Major Ratings and Characteristics  
The 30BQ100G surface-mount Schottky rectifier has been  
designed for applications requiring low forward drop and small  
foot prints on PC boards. Typical applications are in disk drives,  
switching power supplies, converters, free-wheeling diodes,  
battery charging, and reverse battery protection.  
Characteristics  
Values Units  
I
Rectangular  
waveform  
3.0  
A
F(AV)  
V
I
100  
V
Small foot print, surface mountable  
Very low forward voltage drop  
High frequency operation  
RRM  
@t =5μs sine  
800  
0.62  
A
V
p
FSM  
Guard ring for enhanced ruggedness and long term  
reliability  
V
@3.0Apk,T =125°C  
J
F
T
range  
- 55 to175  
°C  
J
Case Styles  
SMC  
1
www.irf.com  
30BQ100G  
Bulletin PD-20805 rev. A 01/07  
Voltage Ratings  
Part number  
30BQ100G  
VR  
Max. DC Reverse Voltage (V)  
100  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
30BQ Units Conditions  
IF(AV) Max.Average Forward Current  
3.0  
4.0  
A
50%duty cycle@TL =148°C,rectangular waveform  
50%duty cycle@TL =138°C,rectangular waveform  
Following any rated  
load condition and  
with rated VRRM applied  
IFSM Max.PeakOneCycleNon-Repetitive  
800  
A
5μs Sineor3μsRect.pulse  
SurgeCurrent  
70  
3.0  
0.5  
10msSineor6msRect. pulse  
EAS NonRepetitiveAvalancheEnergy  
mJ TJ=25°C,IAS=1.0A,18 μssquarepulse  
IAR  
Repetitive Avalanche Current  
A
Current decayinglinearlytozeroin1μsec  
Frequencylimited byTJ max.Va=1.5xVr typical  
Electrical Specifications  
Parameters  
30BQ Units Conditions  
TJ = 25 °C  
VFM Max. Forward Voltage Drop  
(1)  
0.79  
0.90  
0.62  
0.70  
V
V
V
V
@ 3A  
@ 6A  
@ 3A  
@ 6A  
TJ = 125 °C  
VR = rated VR  
IRM  
Max.ReverseLeakageCurrent(1)  
0.1  
5.0  
mA TJ = 25 °C  
mA TJ = 125 °C  
CT  
LS  
Max. Junction Capacitance  
Typical Series Inductance  
115  
3.0  
pF  
VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C  
Measured lead to lead 5mm from package body  
nH  
dv/dt Max. Voltage Rate of Change  
10000  
V/μs (Rated VR)  
(1) Pulse Width < 300μs, Duty Cycle < 2%  
Thermal-Mechanical Specifications  
Parameters  
30BQ Units  
Conditions  
TJ  
Max.JunctionTemperatureRange (*) -55 to175 °C  
Tstg Max.StorageTemperature Range  
-55 to175 °C  
RthJL Max. Thermal Resistance  
Junction to Lead  
12  
°C/W DCoperation  
(**)  
RthJA Max.Thermal Resistance  
Junction to Ambient  
46  
°C/W DCoperation  
wt  
Approximate Weight  
Case Style  
0.24(0.008) g (oz.)  
SMC  
Similar toDO-214AB  
Device Marking  
IR3JG  
(*) dPtot  
dTj  
1
<
thermal runaway condition for a diode on its own heatsink  
Rth(j-a)  
(**) Mounted 1 inch square PCB  
www.irf.com  
2
30BQ100G  
Bulletin PD-20805 rev. A 01/07  
10  
1
10  
T
= 175˚C  
J
150˚C  
125˚C  
0.1  
100˚C  
75˚C  
50˚C  
0.01  
0.001  
0.0001  
0
25˚C  
0
20  
40  
60  
80  
100  
ReverseVoltage-VR (V)  
1
T
T
T
= 175˚C  
= 125˚C  
J
J
J
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage (PerLeg)  
1000  
100  
10  
=
25˚C  
T
= 25˚C  
J
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
20  
40  
60  
Forward Voltage Drop-VFM(V)  
ReverseVoltage-VR (V)  
Fig.1-Max. Forward Voltage Drop Characteristics  
(PerLeg)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage (PerLeg)  
100  
D = 0.75  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
10  
1
P
DM  
t
1
t
2
Notes:  
Single Pulse  
(Thermal Resistance)  
1. Duty factor D = t1/ t2  
.
2. Peak Tj = Pdm x ZthJC + Tc  
.
0.1  
0.00001  
0.0001  
0.001  
t1,RectangularPulseDuration(Seconds)  
Fig.4-Max. Thermal Impedance Z thJC Characteristics (PerLeg)  
0.01  
0.1  
1
10  
100  
www.irf.com  
3
30BQ100G  
Bulletin PD-20805 rev. A 01/07  
2.5  
2
180  
D = 0.75  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
DC  
160  
1.5  
1
RMS Limit  
140  
DC  
Square wave (D = 0.50)  
80% Rated Vr applied  
120  
0.5  
0
see note (2)  
100  
0
1
2
3
4
5
0
0.5  
1 1.5 2 2.5 3 3.5 4 4.5  
Average Forward Current-I F(AV) (A)  
Average Forward Current- I F(AV) (A)  
Fig.5-Maximum Average Forward Dissipation  
Vs. Average Forward Current  
Fig.4-Maximum Average Forward Current  
Vs. Allowable Lead Temperature  
1000  
100  
At Any Rated Load Condition  
And With Rated Vrrm Applied  
Following Surge  
10  
10  
100  
1000  
10000  
SquareWavePulseDuration-Tp (Microsec)  
Fig.6-Maximum Peak Surge Forward Current Vs. Pulse Duration  
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC  
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);  
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR  
www.irf.com  
4
30BQ100G  
Bulletin PD-20805 rev. A 01/07  
Outline Table  
DeviceMarking:IR3J  
2.75 (.108)  
3.15 (.124)  
5.59 (.220)  
6.22 (.245)  
CATHODE  
ANODE  
6.60 (.260)  
7.11 (.280)  
1
2
.152 (.006)  
.305 (.012)  
2
POLARITY  
PART NUMBER  
1
2.00 (.079)  
2.62 (.103)  
.102 (.004)  
.203 (.008)  
0.76 (.030)  
1.52 (.060)  
7.75 (.305)  
8.13 (.320)  
Outline SMC  
Dimensions in millimeters and (inches)  
For recommended footprint and soldering techniques refer to application note #AN-994  
Marking & Identification  
Each device has 2 rows for identification. The first row designates the device as manufactured by International  
Rectifier,indicated by theletters"IR",andthePartNumber(indicatesthecurrent,thevoltage ratingandSchottky  
Generation). Thesecondrowindicatestheyear, theweekofmanufacturingandtheSiteID.  
IR3JG  
SCHOTTKY GENERATION  
VOLTAGE  
CURRENT  
IR LOGO  
YYWWX  
SITE ID  
WEEK  
2nd digit of the YEAR  
"Y" = 1st digit of th YEAR "standard product"  
"P" = "Lead-Free"  
www.irf.com  
5
30BQ100G  
Bulletin PD-20805 rev. A 01/07  
Tape & Reel Information  
Dimensions in millimetres and (inches)  
Ordering Information Table  
Device Code  
30  
B
Q
100  
G
TR  
-
6
7
1
2
4
5
3
1
2
3
4
5
6
-
-
-
-
-
-
Current Rating (30 = 30A)  
B
= Single Lead Diode  
= Schottky Q Series  
Q
Voltage Rating (100 = 100V)  
G = Schottky Generation  
y none = Box (1000 pieces)  
y TR = Tape & Reel (3000 pieces)  
y none = Standard Production  
y PbF = Lead-Free  
7
-
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 01/07  
www.irf.com  
6

30BQ100G 相关器件

型号 制造商 描述 价格 文档
30BQ100GG VISHAY Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, SIMILAR TO DO-214AA, 2 PIN 获取价格
30BQ100GPBF INFINEON SCHOTTKY RECTIFIER 获取价格
30BQ100GPBF VISHAY Schottky Rectifier, 3 A 获取价格
30BQ100GPBF_10 VISHAY Schottky Rectifier, 3 A 获取价格
30BQ100GTR INFINEON SCHOTTKY RECTIFIER 获取价格
30BQ100GTR VISHAY Schottky Rectifier, 3 A 获取价格
30BQ100GTRPBF INFINEON SCHOTTKY RECTIFIER 获取价格
30BQ100GTRPBF VISHAY Schottky Rectifier, 3 A 获取价格
30BQ100PBF INFINEON SCHOTTKY RECTIFIER 获取价格
30BQ100PBF VISHAY Schottky Rectifier, 3 A 获取价格

30BQ100G 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6