IMBG65R022M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性,从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R022M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装,基于先进的英飞凌碳化硅沟槽技术,适于大功率应用。 该器件旨在提高系统性能,缩减尺寸,增强可靠性。
暂无信息
INFINEON
SRF10100CT
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes
局域网 功效 瞄准线 二极管
GXELECTRONICS
SN74HCS251-Q1_V01
SN74HCS251-Q1 Automotive 8-to-1 Multiplexer with 3-State Outputs and Schmitt-Trigger Inputs
暂无信息
TI
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH