IR250BG06D [IRF]

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER;
IR250BG06D
元器件型号: IR250BG06D
生产厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用:

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

栅 栅极
PDF文件: 总3页 (文件大小:152K)
下载文档:  下载PDF数据表文档文件
型号参数:IR250BG06D参数

IR250BG06DCB

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

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0 VISHAY

IR250BG06DCB

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250BG06DCBPBF

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

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0 VISHAY

IR250BG06DCBPBF

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250BG06DPBF

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250BG12D

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250BG12D

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250BG12DCB

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 VISHAY

IR250BG12DCB

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250BG12DCB

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250BG12DPBF

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250SG12H

Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH WAFER

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0 VISHAY

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171 ETC

IR250SG12HCBPBF

Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR250SG12HCBPBF

Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER

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0 VISHAY