IRC630 [IRF]

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A); 功率MOSFET ( VDSS = 200V , RDS(ON) = 0.40ohm ,ID = 9.0A )
IRC630
型号: IRC630
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
功率MOSFET ( VDSS = 200V , RDS(ON) = 0.40ohm ,ID = 9.0A )

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总8页 (文件大小:233K)
下载:  下载PDF数据表文档文件

IRC630-002PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-003PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-007

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-220VAR

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12 ETC

IRC630-007

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRC630-008

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-220VAR

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13 ETC

IRC630-008

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRC630-008PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRC630-018PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-019PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-031

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-031PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 IRF

IRC634

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

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29 IRF

IRC634-002PBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC634-007

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8.7A I(D) | TO-220VAR

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3 ETC