关闭背景特效

IRF3205ZSTRLPBF [IRF]

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;

IRF3205ZSTRLPBF


元器件型号：	IRF3205ZSTRLPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 局域网开关脉冲晶体管
PDF文件：	总12页 (文件大小：376K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF3205ZSTRLPBF参数

IRF320LSPBF

HEXFET㈢ Power MOSFET

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218 IRF

IRF321

N-Channel Power MOSFETs, 3.0 A, 350-400 V

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63 FAIRCHILD

IRF321

N-CHANNEL POWER MOSFETS

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38 SAMSUNG

IRF321

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

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28 INTERSIL

IRF322

N-Channel Power MOSFETs, 3.0 A, 350-400 V

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42 FAIRCHILD

IRF322

N-CHANNEL POWER MOSFETS

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36 SAMSUNG

IRF322

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

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25 INTERSIL

IRF-322+/-10%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-322+/-10%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-3220UH+-10%EBE2

General Purpose Inductor, 220uH, 10%, Ferrite-Core,

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0 VISHAY

IRF323

N-Channel Power MOSFETs, 3.0 A, 350-400 V

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-

48 FAIRCHILD

IRF323

N-CHANNEL POWER MOSFETS

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-

22 SAMSUNG

IRF323

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

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31 INTERSIL

IRF-327UH+-10%EVE2

General Purpose Inductor, 27uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-327UH+-10%EVE2

General Purpose Inductor, 27uH, 10%, Ferrite-Core,

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0 VISHAY

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