IRF3315SPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRF3315SPBF


型号：	IRF3315SPBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总10页 (文件大小：382K)
下载：	下载PDF数据表文档文件

IRF3315STRL

Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3

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0 IRF

IRF3315STRL

Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3

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0 IRF

IRF3315STRR

Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3

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0 IRF

IRF3315STRRPBF

Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

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0 IRF

IRF331R

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA

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23 ETC

IRF332

N-Channel Power MOSFETs, 5.5A, 350 V/400V

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38 FAIRCHILD

IRF332

N-CHANNEL POWER MOSFETS

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30 SAMSUNG

IRF332R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA

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11 ETC

IRF333

N-Channel Power MOSFETs, 5.5A, 350 V/400V

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24 FAIRCHILD

IRF333

N-CHANNEL POWER MOSFETS

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35 SAMSUNG

IRF333

Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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0 VISHAY

IRF-333+/-10%

General Fixed Inductor, 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-333+/-10%

General Fixed Inductor, 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-3330+/-10%

General Fixed Inductor, 1 ELEMENT, 330 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-3330UH+-5%ESE2

General Purpose Inductor, 330uH, 5%, Ferrite-Core,

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0 VISHAY

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