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IRF530NL-102 [IRF]

Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN;

IRF530NL-102


元器件型号：	IRF530NL-102
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN 局域网开关脉冲晶体管
PDF文件：	总11页 (文件大小：613K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF530NL-102参数

IRF530NL-102PBF

Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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1 IRF

IRF530NLPBF

HEXFET Power MOSFET

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40 IRF

IRF530NLPBF

Advanced Process Technology

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14 IRF

IRF530NPBF

HEXFET㈢ Power MOSFET

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327 IRF

IRF530NS

HEXFET Power MOSFET

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42 IRF

IRF530NS

Advanced Process Technology

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41 IRF

IRF530NS

Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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451 IRF

IRF530NSPBF

HEXFET Power MOSFET

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95 IRF

IRF530NSTRLPBF

Advanced Process Technology

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32 IRF

IRF530NSTRRPBF

Advanced Process Technology

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24 IRF

IRF530PBF

Power MOSFET

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83 VISHAY

IRF530PBF

Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements

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220 IRF

IRF530R

N-Channel Power MOSFETs Avalanche Energy Rated

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59 HARRIS

IRF530S

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

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162 IRF

IRF530S

HEXFET Power MOSFET

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105 IRF

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