关闭背景特效

IRF5801 [IRF]

Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A); 功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 2.2ohm ，ID = 0.6A ）

IRF5801


元器件型号：	IRF5801
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 2.2ohm ，ID = 0.6A ）
PDF文件：	总8页 (文件大小：123K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF5801参数

IRF5801PBF

Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP, 6 PIN

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0 IRF

IRF5801PBF-1

Industry-standard pinout TSOP-6 Package

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0 IRF

IRF5801PBF-1_15

HEXFET Power MOSFET

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0 IRF

IRF5801TRPBF

High frequency DC-DC converters

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38 IRF

IRF5801TRPbF-1

Industry-standard pinout TSOP-6 Package

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0 IRF

IRF5802

Power MOSFET(Vdss=150V, Id=0.9A)

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117 IRF

IRF5802PBF

SMPS MOSFET

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35 IRF

IRF5802PBF_10

High frequency DC-DC converters

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19 IRF

IRF5802TRPBF

SMPS MOSFET

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42 IRF

IRF5803

Power MOSFET(Vdss=-40V)

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217 IRF

IRF5803D2

FETKY⑩ MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm)

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124 IRF

IRF5803D2PBF

FETKY ㈢MOSFET & Schottky Diode

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43 IRF

IRF5803D2TR

Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

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0 IRF

IRF5803D2TRPBF

Transistor

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0 INFINEON

IRF5803D2TRPBF

Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

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0 IRF

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