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IRF613 [INFINEON]

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,;
IRF613
型号: IRF613
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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相关型号:

IRF613-001

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-001PBF

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-002

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-002PBF

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-003PBF

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-004

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-005

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF613-005PBF

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 INFINEON

IRF613-006

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-006PBF

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-009PBF

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-010

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613-011

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF613-012

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF613-013

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF613-013PBF

Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF613R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220AB

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29 ETC

IRF614

2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

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146 INTERSIL

IRF614

Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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5 SAMSUNG

IRF614-012

Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY