IRF620SPBF [IRF]

HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80ヘ , ID=5.2A ); HEXFET功率MOSFET( VDSS = 200V , RDS ( ON) = 0.80ヘ, ID = 5.2A )
IRF620SPBF
型号: IRF620SPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80ヘ , ID=5.2A )
HEXFET功率MOSFET( VDSS = 200V , RDS ( ON) = 0.80ヘ, ID = 5.2A )

晶体 晶体管 功率场效应晶体管 开关
文件: 总9页 (文件大小:1821K)
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IRF620STRL

暂无描述

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0 IRF

IRF620STRL

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF620STRLPBF

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF620STRR

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF620STRR

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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1 VISHAY

IRF620STRRPBF

暂无描述

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0 IRF

IRF620STRRPBF

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF620STRRPBF

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF621

N-Channel Power MOSFETs, 7A, 150-200V

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81 FAIRCHILD

IRF6215

HEXFET?? Power MOSFET

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155 IRF

IRF6215

HEXFET?? Power MOSFET

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233 IRF

IRF6215L

-150V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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50 ETC

IRF6215L

HEXFET Power MOSFET

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33 IRF

IRF6215L

HEXFET Power MOSFET

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40 IRF

IRF6215LPBF

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A )

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56 IRF