IRF633-004PBF [IRF]

Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
IRF633-004PBF
型号: IRF633-004PBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

文件: 总1页 (文件大小:42K)
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IRF633-006PBF

Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF633R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | TO-220AB

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28 ETC

IRF634

Advanced Power MOSFET

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916 FAIRCHILD

IRF634

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET

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240 STMICROELECTR

IRF634

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

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156 IRF

IRF634

Advanced Power MOSFET

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100 FAIRCHILD

IRF634

N-channel mosfet transistor

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35 ISC

IRF634

Power MOSFET

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82 VISHAY

IRF634

N-channel mosfet transistor

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35 ISC

IRF634

8.1A, 250V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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3 ROCHESTER

IRF634

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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9 SAMSUNG

IRF634-004

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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-
0 VISHAY

IRF634-004PBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF634-024

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF634A

Advanced Power MOSFET

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884 FAIRCHILD