IRF737LC [INFINEON]
HEXFET?? Power MOSFET; HEXFET®功率MOSFET
| 型号： | IRF737LC |
| 厂家： | 
Infineon |
| 描述： | HEXFET?? Power MOSFET |
| 文件： | 总8页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1314
IRF737LC
PRELIMINARY
HEXFET® Power MOSFET
Reduced Gate Drive Requirement
Enhanced 30V VGS Rating
Reduced CISS, COSS, CRSS
Extremely High Frequency Operation
Repetitive Avalanche Rated
VDSS = 300V
RDS(on) = 0.75Ω
ID = 6.1A
Description
This new series of Low Charge HEXFETs achieve
significantlylowergatechargeoverconventionalMOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristics of
HEXFETs offer the designer a new standard in power
transistors for switching applications.
Absolute Maximum Ratings
Parameter
Max.
6.1
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.9
A
24
PD @TC = 25°C
Power Dissipation
74
W
W/°C
V
Linear Derating Factor
0.59
±30
120
6.1
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
7.4
mJ
V/ns
3.4
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.50
Max.
Units
RθJC
RθCS
RθJA
1.7
––––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
––––
IRF737LC
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
300 ––– –––
––– 0.391 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.75
Ω
V
S
VGS = 10V, ID = 3.7A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 3.7A
VDS = 300V, VGS = 0V
VDS = 240V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
2.7
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 17
––– ––– 4.8
––– ––– 7.6
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 6.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 240V
VGS = 10V, See Fig. 6 and 13
VDD = 150V
–––
–––
–––
–––
6.6 –––
21 –––
13 –––
12 –––
ID = 6.1A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
RD = 24Ω, See Fig. 10
Between lead,
LD
Internal Drain Inductance
–––
–––
4.5
6mm (0.25in.)
nH
pF
from package
–––
–––
–––
–––
LS
Internal Source Inductance
7.5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 430 –––
––– 120 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
9.2 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 6.1
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
24
p-n junction diode.
TJ = 25°C, IS = 6.1A, VGS = 0V
TJ = 25°C, IF = 6.1A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.6
––– 320 490
––– 1.5 2.2
V
ns
µC
Qrr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 6.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 25V, starting TJ = 25°C, L = 5.7mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 6.1A. (See Figure 12)
IRF737LC
100
10
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
1
4.5V
4.5V
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
20µs PULSE WIDTH
T
C
T
= 150°C
= 25°C
C
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
TJ = 150oC
TJ = 25oC
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 6.1A
D
TJ = 150°C
TJ = 25°C
1
0.1
0.01
VDS = 50V
20µs PULSE WIDTH
V
= 10V
GS
A
10A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRF737LC
800
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 6.1A
D
GS
iss
= C + C
,
C
ds
SHORTED
gs
gd
V
V
V
= 240V
= 150V
= 60V
DS
DS
DS
700
600
500
400
300
200
100
0
= C
rss
oss
gd
= C + C
ds
gd
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 150°C
J
100µs
T = 25°C
J
1ms
10ms
T
T
= 25°C
= 150°C
C
J
Single Pulse
V
= 0V
GS
A
0.1
0.1
A
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRF737LC
RD
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VDD
Fig 10a. Switching Time Test Circuit
A
150
25
50
75
100
125
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.02
P
D M
0.1
t
1
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. D uty factor D
=
t
/ t
1
2
2. Peak T = P
x Z
+ T
C
DM
J
thJC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF737LC
240
200
160
120
80
I
D
TOP
2.7A
3.9A
BOTTOM 6.1A
10 V
Fig 12a. Unclamped Inductive Test Circuit
40
V
= 50V
50
DD
0
A
150
25
75
100
125
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRF737LC
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
Low Stray Inductance
• Ground Plane
D.U.T
•
•
Low Leakage Inductance
Current Transformer
RG
•
dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRF737LC
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
LOT CODE 9B1M
IRF1010
9246
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
Data and specifications subject to change without notice. 8/95
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