IRF7604PBF [IRF]

HEXFET POWER MOSFET ( VDSS = -20V , RDS(on) = 0.09ヘ ); HEXFET功率MOSFET( VDSS = -20V , RDS ( ON) = 0.09ヘ)
IRF7604PBF
型号: IRF7604PBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

HEXFET POWER MOSFET ( VDSS = -20V , RDS(on) = 0.09ヘ )
HEXFET功率MOSFET( VDSS = -20V , RDS ( ON) = 0.09ヘ)

文件: 总8页 (文件大小:509K)
下载:  下载PDF数据表文档文件

IRF7604TRPBF

Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

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0 IRF

IRF7606

Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)

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157 IRF

IRF7606PBF

HEXFET Power MOSFET

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51 IRF

IRF7606PBF

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8

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0 IRF

IRF7606TR

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

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1 IRF

IRF7606TRHR

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8

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0 IRF

IRF7606TRPBF

暂无描述

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2 IRF

IRF7607

Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

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-
76 IRF

IRF7607PBF

HEXFET Power MOSFET

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31 IRF

IRF7607TRHR

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8

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-
0 IRF

IRF7607TRPBF

Trench Technology

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31 IRF

IRF7663

Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)

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-
137 IRF

IRF7663PBF

Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

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13 IRF

IRF7663TRPBF

MOSFET P-CH 20V 8.2A MICRO8

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0 INFINEON

IRF7665S2PBF

Key parameters optimized for Class-D audio amplifier applications

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0 IRF