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元器件品牌
IRF820SPBF
[IRF]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
元器件型号：
IRF820SPBF
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET
PDF文件：
总9页 (文件大小：319K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF820SPBF参数
查看货源
IRF820SR
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Warning
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156
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0
FAIRCHILD
IRF820STRL
MOSFET N-CH 500V 2.5A D2PAK
Warning
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156
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0
VISHAY
IRF820STRR
MOSFET N-CH 500V 2.5A D2PAK
Warning
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156
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0
VISHAY
IRF820T
2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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0
MOTOROLA
IRF820T
2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Warning
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156
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0
MOTOROLA
IRF821
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
Warning
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156
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54
FAIRCHILD
IRF821
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
Warning
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156
-
23
MOTOROLA
IRF821
N-CHANNEL POWER MOSFETS
Warning
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156
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39
SAMSUNG
IRF821
Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
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156
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0
SAMSUNG
IRF821
2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
ROCHESTER
IRF821-009
Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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156
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0
INFINEON
IRF821FI
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220AB
Warning
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27
ETC
IRF821R
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-220AB
Warning
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17
ETC
IRF821R
TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.5A I(D),TO-220AB
Warning
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156
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0
RENESAS
IRF822
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
Warning
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on line
156
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47
FAIRCHILD
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