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IRF9230EDPBF [IRF]

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA;

IRF9230EDPBF


元器件型号：	IRF9230EDPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
PDF文件：	总7页 (文件大小：881K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9230EDPBF参数

IRF9230EPBF

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

IRF9230PBF

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

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1 IRF

IRF9231

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

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48 INTERSIL

IRF9231

P-CHANNEL POWER MOSFETS

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25 SAMSUNG

IRF9231

6.5A, 150V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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0 ROCHESTER

IRF9232

P-CHANNEL POWER MOSFETS

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35 SAMSUNG

IRF9232

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

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57 INTERSIL

IRF9232

5.5A, 200V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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0 ROCHESTER

IRF9233

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

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56 INTERSIL

IRF9233

P-CHANNEL POWER MOSFETS

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42 SAMSUNG

IRF9233

Power Field-Effect Transistor, 5.5A I(D), 150V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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0 VISHAY

IRF9233

5.5A, 150V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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1 ROCHESTER

IRF9240

P-CHANNEL POWER MOSFETS

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105 SAMSUNG

IRF9240

P–CHANNEL POWER MOSFET

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215 SEME-LAB

IRF9240

P-CHANNEL POWER MOSFET

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75 SEME-LAB

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