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IRF9610STRLPBF [IRF]

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3;

IRF9610STRLPBF


元器件型号：	IRF9610STRLPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 开关脉冲晶体管
PDF文件：	总9页 (文件大小：290K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9610STRLPBF参数

IRF9610STRR

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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6 IRF

IRF9610STRRPBF

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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6 IRF

IRF9611

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 1A I(D) | TO-220AB

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75 ETC

IRF9611

Power Field-Effect Transistor, 1.75A I(D), 150V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9612

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB

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93 ETC

IRF9612

Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9613

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 900MA I(D) | TO-220AB

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63 ETC

IRF9613

Power Field-Effect Transistor, 1.5A I(D), 150V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9620

3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

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156 INTERSIL

IRF9620

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

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533 IRF

IRF9620

Power MOSFET

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169 VISHAY

IRF9620

Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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4 VISHAY

IRF9620

Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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14 SAMSUNG

IRF9620-003

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

IRF9620-003PBF

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

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