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元器件品牌
IRF9620SPBF
[IRF]
HEXFET Power MOSFET; HEXFET功率MOSFET
元器件型号：
IRF9620SPBF
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET Power MOSFET
HEXFET功率MOSFET
PDF文件：
总9页 (文件大小：1051K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF9620SPBF参数
查看货源
IRF9620STRL
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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156
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3
VISHAY
IRF9620STRLPBF
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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156
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0
VISHAY
IRF9620STRR
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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156
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0
IRF
IRF9621
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-220AB
Warning
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36
ETC
IRF9622
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB
Warning
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82
ETC
IRF9622
Transistor
Warning
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156
-
2
VISHAY
IRF9622
Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
-
2
SAMSUNG
IRF9623
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 1.5A I(D) | TO-220AB
Warning
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156
-
37
ETC
IRF9630
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
Warning
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on line
156
-
438
INTERSIL
IRF9630
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
Warning
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156
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1863
IRF
IRF9630
P-CHANNEL POWER MOSFETS
Warning
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156
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167
SAMSUNG
IRF9630
Power MOSFET
Warning
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156
-
470
VISHAY
IRF9630
P-CHANNEL POWER MOSFETS
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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178
SAMSUNG
IRF9630
Power MOSFET
Warning
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on line
156
-
208
KERSEMI
IRF9630
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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26
SAMSUNG
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