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元器件品牌
IRF9952QPBF
[IRF]
HEXFET Power MOSFET; HEXFET功率MOSFET
元器件型号：
IRF9952QPBF
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET Power MOSFET
HEXFET功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 局域网
PDF文件：
总10页 (文件大小：281K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF9952QPBF参数
查看货源
IRF9952QPBF_10
HEXFETPOWERMOSFET
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16
IRF
IRF9952QTRPBF
Advanced Process Technology
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9
IRF
IRF9952TR
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,
Warning
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0
INFINEON
IRF9952TRPBF
Generation V Technology
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28
IRF
IRF9952TRPBF
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
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156
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1
INFINEON
IRF9953
Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
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283
IRF
IRF9953PBF
HEXFET㈢ Power MOSFET
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54
IRF
IRF9953TR
暂无描述
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1
IRF
IRF9953TRPBF
暂无描述
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1
IRF
IRF9956
Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
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156
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282
IRF
IRF9956
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Warning
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156
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2
INFINEON
IRF9956PBF
HEXFET Power MOSFET
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156
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66
IRF
IRF9956PBF
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Warning
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156
-
0
INFINEON
IRF9956PBF
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
IRF
IRF9956TR
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Warning
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156
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0
IRF
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