关闭背景特效

IRFBC30A [IRF]

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A); 功率MOSFET （ VDSS = 600V ， RDS（ON）最大值= 2.2ohm ，ID = 3.6A ）

IRFBC30A


元器件型号：	IRFBC30A
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET （ VDSS = 600V ， RDS（ON）最大值= 2.2ohm ，ID = 3.6A ）晶体晶体管功率场效应晶体管开关脉冲局域网
PDF文件：	总8页 (文件大小：101K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFBC30A参数

IRFBC30AL

600V Single N-Channel HEXFET Power MOSFET in a TO-262 package

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31 ETC

IRFBC30AL

Power MOSFET

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28 VISHAY

IRFBC30ALPBF

Power MOSFET

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17 VISHAY

IRFBC30ALPBF

Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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0 IRF

IRFBC30APBF

Power MOSFET

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32 VISHAY

IRFBC30APBF

HEXFET㈢ Power MOSFET

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23 IRF

IRFBC30APBF

Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

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0 VISHAY

IRFBC30AS

Power MOSFET

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34 VISHAY

IRFBC30AS

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

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68 IRF

IRFBC30ASPBF

Power MOSFET

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13 VISHAY

IRFBC30ASPBF

Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRFBC30ASTRL

Power MOSFET

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22 VISHAY

IRFBC30ASTRL

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.6A I(D) | TO-252AA

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27 ETC

IRFBC30ASTRLPBF

Power MOSFET

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18 VISHAY

IRFBC30ASTRLPBF

Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

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