IRFBC40LC [IRF]

HEXFET-R POWER MOSFET; HEXFET -R功率MOSFET

IRFBC40LC


型号：	IRFBC40LC
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET-R POWER MOSFET HEXFET -R功率MOSFET 晶体晶体管功率场效应晶体管开关局域网
文件：	总8页 (文件大小：172K)
下载：	下载PDF数据表文档文件

IRFBC40LC-002

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-002PBF

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-006PBF

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-010

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-017PBF

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-019PBF

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-024PBF

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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2 VISHAY

IRFBC40LC-031PBF

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LCPBF

Power MOSFET

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45 VISHAY

IRFBC40LPBF

Power MOSFET

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19 VISHAY

IRFBC40LPBF

HEXFET㈢ Power MOSFET

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28 IRF

IRFBC40PBF

HEXFET POWER MOSFET (VDSS=600V , RDS(on)=1.2Ohm , ID=6.2A)

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74 IRF

IRFBC40PBF

Power MOSFET

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32 VISHAY

IRFBC40PBF

Power MOSFET

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19 KERSEMI

IRFBC40R

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.2A I(D) | TO-220AB

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90 ETC

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