关闭背景特效

IRFF9130 [IRF]

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A); POWER MOSFET P- CHANNEL （ BVDSS = -100V ， RDS（ON） = 0.30ohm ，ID = -6.5A ）

IRFF9130


元器件型号：	IRFF9130
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) POWER MOSFET P- CHANNEL （ BVDSS = -100V ， RDS（ON） = 0.30ohm ，ID = -6.5A ）晶体晶体管功率场效应晶体管
PDF文件：	总7页 (文件大小：135K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFF9130参数

IRFF9130_11

P-CHANNEL POWER MOSFET

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14 SEME-LAB

IRFF9131

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.5A I(D) | TO-205AF

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48 ETC

IRFF9131

Power Field-Effect Transistor, 6.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

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1 VISHAY

IRFF9132

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | TO-205AF

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25 ETC

IRFF9132

Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39

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0 NJSEMI

IRFF9132

Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

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0 VISHAY

IRFF9132

Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

IRFF9133

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5.5A I(D) | TO-205AF

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34 ETC

IRFF9133

Trans MOSFET P-CH 80V 6.5A 3-Pin TO-39

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0 NJSEMI

IRFF9133

5.5A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

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0 RENESAS

IRFF9133

Power Field-Effect Transistor, 5.5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

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0 VISHAY

IRFF9133

6.5A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

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0 ROCHESTER

IRFF9133

Power Field-Effect Transistor, 6.5A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

IRFF9210

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

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51 IRF

IRFF9210

P-Channel MOSFET in a Hermetically sealed TO39

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40 SEME-LAB

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