关闭背景特效

IRFI620G [IRF]

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A); 功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.80ohm ，ID = 4.1A ）

IRFI620G


元器件型号：	IRFI620G
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A) 功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.80ohm ，ID = 4.1A ）晶体晶体管功率场效应晶体管开关脉冲局域网
PDF文件：	总6页 (文件大小：176K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFI620G参数

IRFI620G-002PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-004PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-005PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-006

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-009

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-009PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-010PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-011PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-012PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-013PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-015PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-017

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-017PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-018PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-019PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

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