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IRFI644-013 [IRF]

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;

IRFI644-013


元器件型号：	IRFI644-013
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 局域网开关脉冲晶体管
PDF文件：	总1页 (文件大小：66K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFI644-013参数

IRFI644A

Advanced Power MOSFET

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18 FAIRCHILD

IRFI644A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA

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15 ETC

IRFI644A

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

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0 SAMSUNG

IRFI644B

250V N-Channel MOSFET

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25 FAIRCHILD

IRFI644G

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

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75 IRF

IRFI644G

Power MOSFET

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35 VISHAY

IRFI644G-002

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-002PBF

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-003PBF

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-004PBF

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-005PBF

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-010

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-011PBF

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-012PBF

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI644G-018PBF

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

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