IRFI644GPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRFI644GPBF


型号：	IRFI644GPBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总8页 (文件大小：1364K)
下载：	下载PDF数据表文档文件

IRFI650B

200V N-Channel MOSFET

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22 FAIRCHILD

IRFI654B

250V N-Channel MOSFET

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30 FAIRCHILD

IRFI654B-FP001

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 FAIRCHILD

IRFI654BTU

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

IRFI710A

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-262AA

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27 ETC

IRFI710ATU

暂无描述

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0 FAIRCHILD

IRFI710B

400V N-Channel MOSFET

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18 FAIRCHILD

IRFI720A

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-262AA

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22 ETC

IRFI720B

400V N-Channel MOSFET

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27 FAIRCHILD

IRFI720G

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)

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26 IRF

IRFI720G

Power MOSFET

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18 VISHAY

IRFI720G-003PBF

Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI720G-004PBF

Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI720G-005PBF

Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI720G-006PBF

Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

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