IRFI730G [IRF]

HEXFET POWER MOSFET; HEXFET功率MOSFET

IRFI730G


型号：	IRFI730G
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET POWER MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总6页 (文件大小：175K)
下载：	下载PDF数据表文档文件

IRFI730GPBF

Power MOSFET

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22 VISHAY

IRFI730GPBF

HEXFET Power MOSFET

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16 IRF

IRFI734

Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)

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4 IRF

IRFI734

Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)

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11 IRF

IRFI734G

Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)

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17 IRF

IRFI734G

Power MOSFET

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20 VISHAY

IRFI734G

Power Field-Effect Transistor, 3.4A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3

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0 VISHAY

IRFI734GPBF

Power MOSFET

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12 VISHAY

IRFI734GPBF

Low Thermal Resistance

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12 IRF

IRFI734GPBF

Power Field-Effect Transistor, 3.4A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3

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0 VISHAY

IRFI740

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)

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81 IRF

IRFI740

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)

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51 IRF

IRFI740-005

Power Field-Effect Transistor, 6A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFI740-009

Power Field-Effect Transistor, 6A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFI740-009PBF

Power Field-Effect Transistor, 6A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

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