IRFI9634GPBF [IRF]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRFI9634GPBF
型号: IRFI9634GPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

文件: 总8页 (文件大小:362K)
下载:  下载PDF数据表文档文件

IRFI9640

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

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47 IRF

IRFI9640

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

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38 IRF

IRFI9640G

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

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51 IRF

IRFI9640G

Power MOSFET

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41 VISHAY

IRFI9640G-004PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9640G-004PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9640G-006PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9640G-006PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9640G-009PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9640G-009PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9640G-010PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9640G-010PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9640G-011PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9640G-011PBF

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9640G-012

Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY