IRFI9Z24G [IRF]

HEXFET POWER MOSFET; HEXFET功率MOSFET
IRFI9Z24G
元器件型号: IRFI9Z24G
生产厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用:

HEXFET POWER MOSFET
HEXFET功率MOSFET

晶体 晶体管 开关 脉冲 局域网
PDF文件: 总6页 (文件大小:174K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFI9Z24G参数

IRFI9Z24G-002PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-004PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-005PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-009PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-009PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-010PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-012PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-012PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-013PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-015PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-019PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-024PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-024PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-029PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9Z24G-031PBF

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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