IRFIZ24NPBF [IRF]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET

IRFIZ24NPBF


型号：	IRFIZ24NPBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET㈢ Power MOSFET HEXFET㈢功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总9页 (文件大小：215K)
下载：	下载PDF数据表文档文件

IRFIZ24V

Power MOSFET(Vdss=60V, Rds(on)=0.060ohm, Id=14A)

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24 IRF

IRFIZ30

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | TO-251VAR

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24 ETC

IRFIZ34

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-251VAR

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59 ETC

IRFIZ34-002

Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFIZ34-011PBF

Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRFIZ34-011PBF

Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFIZ34A

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262AA

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23 ETC

IRFIZ34E

Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)

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36 IRF

IRFIZ34E-011PBF

Power Field-Effect Transistor, 21A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFIZ34E-013PBF

Power Field-Effect Transistor, 21A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFIZ34E-017PBF

Power Field-Effect Transistor, 21A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFIZ34E-019PBF

Power Field-Effect Transistor, 21A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFIZ34E-031

Power Field-Effect Transistor, 21A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFIZ34E-109

Power Field-Effect Transistor, 21A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRFIZ34E-110

Power Field-Effect Transistor, 21A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

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