IRFL1006TR [INFINEON]
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN;
| 型号： | IRFL1006TR |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN 局域网 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91876
IRFL1006
HEXFET® Power MOSFET
l Surface Mount
D
l Advanced Process Technology
l Dynamic dv/dt Rating
l Fast Switching
VDSS = 60V
RDS(on) = 0.22Ω
l Fully Avalanche Rated
G
ID = 1.6A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The SOT-223 package is designed for surface-mount
usingvaporphase,infrared,orwavesolderingtechniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -223
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
2.3
1.6
A
1.3
6.4
PD @TA = 25°C
PD @TA = 25°C
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
2.1
W
W
1.0
8.3
mW/°C
V
VGS
± 20
54
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
1.6
EAR
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
0.1
mJ
V/ns
°C
dv/dt
TJ, TSTG
5.0
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90
Max.
120
60
Units
RθJA
RθJA
°C/W
50
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
3/29/99
IRFL1006
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
GateThresholdVoltage
––– ––– 0.22
Ω
V
S
VGS = 10V, ID = 1.6A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 1.6A
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
2.0
3.0
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 8.0
––– ––– 1.7
––– ––– 3.3
IDSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 1.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 9
–––
–––
–––
–––
7.4 –––
18 –––
18 –––
17 –––
VDD = 30V
ID = 1.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 49Ω
RD = 19Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 160 –––
Output Capacitance
–––
–––
55 –––
19 –––
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 1.6
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 6.4
p-n junction diode.
TJ = 25°C, IS = 1.6A, VGS = 0V
TJ = 25°C, IF = 1.6A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
V
––– 31
––– 46
47
68
ns
nC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 1.6A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 42 mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 1.6A. (See Figure 12)
2
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IRFL1006
10
10
VGS
15V
10V
VGS
15V
10V
TOP
TOP
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
1
4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
1.6A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
2.0
1.5
1.0
0.5
0.0
1
V
= 25V
DS
V
= 10V
GS
20µs PULSE WIDTH
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFL1006
20
16
12
8
300
I
D
= 1.6A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
C
= C
V
V
V
= 48V
= 30V
= 12V
rss
gd
DS
DS
DS
C
= C + C
240
180
120
60
oss
ds
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFL1006
2.0
1.5
1.0
0.5
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFL1006
140
120
100
80
I
D
TOP
0.72A
1.0A
BOTTOM 1.6A
1 5V
DRIVER
L
V
G
DS
D.U.T
R
+
V
60
D D
-
I
A
AS
20V
0.01
Ω
t
40
p
20
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFL1006
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFL1006
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
EXAMPLE : THIS IS AN IRFL014
SOT-223
W AFER
PART NUM BER
LO T CO DE
FL014
314
XXXXXX
INTERNATIO NAL
RECTIFIER
LOG O
DATE CO DE (YW W )
Y
=
LAST DIG IT OF THE YEAR
W EEK
BO TTOM
TOP
W W
=
8
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IRFL1006
Tape & Reel Information
SOT-223 Outline
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
T R
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP .
FE E D D IR E C T IO N
2.30 (.0 90)
2.10 (.0 83)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
N O T E S
1. C O N TR O LLIN G D IM E N S IO N : M ILLIM E TE R .
2. O U T LIN E C O N F O R M S TO E IA -481 E IA -541.
:
&
3. E A C H O 330.00 (13.0 0) R E E L C O N TA IN S 2,500 D E VIC E S.
13.20 (.51 9)
12.80 (.50 4)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
M IN .
18.40 (.724)
M AX .
N O TE S
:
1. O U T LIN E C O M FO R M S TO E IA -418-1.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER ..
3. D IM E N S IO N M E AS U R E D
14.40 (.566)
12.40 (.488)
4
@ HU B.
4. IN CLU D E S F LA N G E D IS TO R T IO N
@
O U T ER ED G E .
3
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http://www.irf.com/
Data and specifications subject to change without notice. 3/99
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9
相关型号：
IRFL1006TRPBF
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN
INFINEON
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