概述
规格参数
数据手册
替代型号IRFM9140 概述
POWER MOSFET THRU-HOLE (TO-254AA) 功率MOSFET直通孔（ TO- 254AA ） 功率场效应晶体管
IRFM9140 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Active |
| 包装说明： | FLANGE MOUNT, S-XSFM-P3 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | 风险等级： | 5.1 |
| Is Samacsys： | N | 其他特性： | HIGH RELIABILITY |
| 雪崩能效等级（Eas）： | 500 mJ | 外壳连接： | ISOLATED |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 100 V |
| 最大漏极电流 (Abs) (ID)： | 18 A | 最大漏极电流 (ID)： | 18 A |
| 最大漏源导通电阻： | 0.22 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码： | TO-254AA | JESD-30 代码： | S-XSFM-P3 |
| JESD-609代码： | e0 | 元件数量： | 1 |
| 端子数量： | 3 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 最低工作温度： | -55 °C |
| 封装主体材料： | UNSPECIFIED | 封装形状： | SQUARE |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | P-CHANNEL | 最大功率耗散 (Abs)： | 125 W |
| 最大脉冲漏极电流 (IDM)： | 72 A | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | NO |
| 端子面层： | Tin/Lead (Sn/Pb) | 端子形式： | PIN/PEG |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| 最大关闭时间（toff）： | 150 ns | 最大开启时间（吨）： | 120 ns |
| Base Number Matches： | 1 |
IRFM9140 数据手册
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IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
REF:MIL-PRF-19500/595
100V, P-CHANNEL
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on) ID
HEXFET® MOSFETTECHNOLOGY
IRFM9140
0.20Ω -18A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
-18
-11
D
D
GS
GS
C
A
I
= -10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
-72
DM
@ T = 25°C
P
D
125
W
W/°C
V
C
Linear Derating Factor
1.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
-18
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
12.5
-5.5
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
09/22/03
IRFM9140
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.087
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.20
0.22
-4.0
—
V
V
= -10V, I = -11A➀
D
DS(on)
GS
GS
Ω
= -10V, I = -18A ➀
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
6.2
—
V
S ( )
V
= V , I = -250µA
GS(th)
fs
DS
GS
D
Ω
g
V
DS
> -15V, I
= -11A➀
DS
I
-25
V
= -80V, V = 0V
DS GS
DSS
µA
—
-250
V
= -80V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
60
V
= -20V
GSS
GSS
GS
nA
nC
V
=20V
GS
= -10V, ID -18A
Q
Q
Q
V
GS
g
gs
gd
d(on)
r
=
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
13
V
= -50V
DS
35.2
35
t
t
t
t
V
= -50V, I = -11A
DD
D
= 9.1Ω, V
85
R
G
= -10V
GS
ns
Turn-Off Delay Time
Fall Time
85
65
d(off)
f
L
L
Total Inductance
—
nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S +
D
C
C
C
Input Capacitance
—
—
—
1400
600
200
V
GS
= 0V, V
= -25V
iss
DS
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
—
—
pF
oss
rss
Source-DrainDiodeRatingsandCharacteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-18
-72
-5.0
280
3.6
S
A
SM
V
V
T = 25°C, I = -18A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
µc
T = 25°C, I = -18A, di/dt ≤-100A/µs
j
rr
RR
F
V
≤ -50V ➀
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-sink
—
—
—
—
0.21
—
1.0
—
°C/W
Junction to Ambient
48
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFM9140
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRFM9140
13a & b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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IRFM9140
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFM9140
L
V
D S
D .U .T
R
G
V
D D
I
A
A S
D R IV ER
VG
-
S
0.0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-10V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFM9140
Foot Notes:
➀ I
≤ -18A, di/dt ≤ −100A/µs,
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
SD
DD
V
≤ -100V, T ≤ 150°C
J
➀ V
=-25V, starting T = 25°C, L = 3.1mH
J
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
DD
Peak I = -18A, V
= -10V
L
GS
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
17.40 [.685]
16.89 [.665]
B
B
13.84 [.545]
13.59 [.535]
R 1.52 [.060]
1
2
3
1
2
3
4.06 [.160]
3.56 [.140]
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
0.36 [.014]
B
A
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING &TOLERANCINGPER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONT ROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDECOUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/03
www.irf.com
7
IRFM9140 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| JANS2N7236 | INFINEON | POWER MOSFET THRU-HOLE (TO-254AA) | 完全替代 |
|
| JANTXV2N7236 | INFINEON | POWER MOSFET THRU-HOLE (TO-254AA) | 完全替代 |
|
| 2N7236 | MICROSEMI | P-CHANNEL MOSFET | 功能相似 |
|
IRFM9140 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IRFM9140A | INFINEON | -100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package - | 获取价格 |
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|
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|
| IRFM9230 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-254AA | 获取价格 |
|
| IRFM9230PBF | INFINEON | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.81ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 获取价格 |
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|
| IRFM9240 | NJSEMI | Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-254AA | 获取价格 |
|
| IRFM9240D | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254VAR | 获取价格 |
|
| IRFM9240DPBF | INFINEON | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | 获取价格 |
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