IRFP054N-207 [IRF]

Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
IRFP054N-207
型号: IRFP054N-207
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRFP054N-207PBF

Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFP054N-208

Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFP054NPBF

HEXFET Power MOSFET

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129 IRF

IRFP054PBF

HEXFET Power MOSFET

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31 IRF

IRFP054PBF

Power MOSFET

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23 VISHAY

IRFP054PBF

Power MOSFET

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17 VISHAY

IRFP054V

Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A)

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102 IRF

IRFP054VPBF

HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 9.0mヘ , ID = 93A )

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46 IRF

IRFP064

Power MOSFET

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87 VISHAY

IRFP064

Power MOSFET

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31 VISHAY

IRFP064

Power MOSFET

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211 VISHAY

IRFP064

Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)

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770 IRF

IRFP064_11

Power MOSFET

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22 VISHAY

IRFP064N

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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198 IRF

IRFP064N

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)

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1011 IRF