IRFP22N50APBF [IRF]
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A ); HEXFET功率MOSFET （ VDSS = 500V ， RDS （ ON）最大值= 0.23ヘ， ID = 22A ）
| 型号： | IRFP22N50APBF |
| 厂家： | 
INTERNATIONAL RECTIFIER |
| 描述： | HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A ) |
| 文件： | 总8页 (文件大小：192K) |
| 下载： | 下载PDF数据表文档文件 |
IRFP22N60K
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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64
VISHAY
IRFP22N60K
SMPS MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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85
IRF
IRFP22N60K
SMPS MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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162
IRF
IRFP22N60KPBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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34
VISHAY
IRFP22N60KPBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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86
IRF
IRFP230
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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3
SAMSUNG
IRFP231
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFP232
Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFP232
Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
IRFP233
Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
SAMSUNG
IRFP23N50L
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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63
VISHAY
IRFP23N50L
Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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181
IRF
IRFP23N50LPBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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27
VISHAY
IRFP23N50LPBF
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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53
IRF
IRFP240
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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338
VISHAY
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