关闭背景特效

IRFP32N50 [IRF]

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A); 功率MOSFET （ VDSS = 500V ， RDS（ON）（典型值） = 0.135ohm ，ID = 32A ）

IRFP32N50


元器件型号：	IRFP32N50
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A) 功率MOSFET （ VDSS = 500V ， RDS（ON）（典型值） = 0.135ohm ，ID = 32A ）
PDF文件：	总8页 (文件大小：96K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFP32N50参数

IRFP32N50K

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

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277 IRF

IRFP32N50K

HEXFET Power MOSFET

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93 IRF

IRFP32N50K

Power MOSFET

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45 VISHAY

IRFP32N50K_04

HEXFET Power MOSFET

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43 IRF

IRFP32N50KPBF

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.135ヘ , ID = 32A )

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69 IRF

IRFP32N50KPBF

Power MOSFET

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17 VISHAY

IRFP32N50KS

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247VAR

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38 ETC

IRFP330

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | TO-247VAR

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53 ETC

IRFP3306PBF

HEXFET Power MOSFET

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96 IRF

IRFP331

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-247VAR

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25 ETC

IRFP331

Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP332

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-247VAR

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35 ETC

IRFP332

Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP333

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-247VAR

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18 ETC

IRFP333

Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

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