概述
规格参数
数据手册
替代型号IRFR120NPBF 概述
Fast Switching 快速开关 MOS管 功率场效应晶体管
IRFR120NPBF 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 包装说明： | LEAD FREE, PLASTIC, DPAK-2/3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | 风险等级： | 6.84 |
| 其他特性： | AVALANCHE RATED | 雪崩能效等级（Eas）： | 91 mJ |
| 外壳连接： | DRAIN | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 100 V | 最大漏极电流 (Abs) (ID)： | 7.4 A |
| 最大漏极电流 (ID)： | 9.4 A | 最大漏源导通电阻： | 0.21 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码： | TO-252AA |
| JESD-30 代码： | R-PSSO-G2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 最低工作温度： | -55 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 42 W |
| 最大脉冲漏极电流 (IDM)： | 38 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式： | GULL WING |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | 30 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
IRFR120NPBF 数据手册
通过下载IRFR120NPBF数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载PD - 95067A
IRFR/U120NPbF
• Lead-Free
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D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE EK 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLYLINE "A"
12
34
LINE A
Note: "P" in assembly line position
AS S E MB L Y
LOT CODE
indicates "Lead-F ree"
OR
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE EK 16
A = AS S E MB L Y S I T E CODE
8
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IRFR/U120NPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S EMB L Y
DAT E CODE
YEAR 9 = 1999
WE EK 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
pos i ti on indicates "L ead-F ree"
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE EK 19
A = AS S E MB L Y S IT E CODE
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IRFR/U120NPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
IRFR120NPBF 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| IRFR120NTRPBF | INFINEON | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me | 类似代替 |
|
| IRFR120NTRLPBF | INFINEON | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me | 类似代替 |
|
| IRFR120NTRRPBF | INFINEON | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me | 类似代替 |
|
IRFR120NPBF 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IRFR120NPBF_15 | INFINEON | ADVANCED PROCESS TECHNOLOGY | 获取价格 |
|
| IRFR120NTR | INFINEON | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | 获取价格 |
|
| IRFR120NTR | UMW | 种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:9.4A;Vgs(th)(V):±20;漏源导通电阻:21mΩ@10V | 获取价格 |
|
| IRFR120NTRL | INFINEON | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | 获取价格 |
|
| IRFR120NTRLPBF | INFINEON | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | 获取价格 |
|
| IRFR120NTRPBF | INFINEON | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | 获取价格 |
|
| IRFR120NTRR | INFINEON | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | 获取价格 |
|
| IRFR120NTRRPBF | INFINEON | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | 获取价格 |
|
| IRFR120PBF | INFINEON | HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.27ヘ , ID = 7.7A ) | 获取价格 |
|
| IRFR120PBF | VISHAY | IRFR120 | 获取价格 |
|
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