关闭背景特效

IRFR1N60A [IRF]

Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A); 功率MOSFET （ VDSS = 600V ， RDS（ON）最大值= 7.0ohm ，ID = 1.4A ）

IRFR1N60A


元器件型号：	IRFR1N60A
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A) 功率MOSFET （ VDSS = 600V ， RDS（ON）最大值= 7.0ohm ，ID = 1.4A ）
PDF文件：	总10页 (文件大小：181K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR1N60A参数

IRFR1N60APBF

Power MOSFET

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27 VISHAY

IRFR1N60APBF

SMPS MOSFET

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26 IRF

IRFR1N60ATR

Power MOSFET

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26 VISHAY

IRFR1N60ATRL

暂无描述

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0 IRF

IRFR1N60ATRLPBF

Power MOSFET

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12 VISHAY

IRFR1N60ATRPBF

Power MOSFET

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11 VISHAY

IRFR1N60ATRR

Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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0 VISHAY

IRFR1N60ATRRPBF

Power MOSFET

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16 VISHAY

IRFR210

Power MOSFET

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191 VISHAY

IRFR210

Power MOSFET

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40 KERSEMI

IRFR210

Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)

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276 IRF

IRFR210A

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.7A I(D) | TO-252AA

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39 ETC

IRFR210B

200V N-Channel MOSFET

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54 FAIRCHILD

IRFR210BTF_FP001

Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

IRFR210BTM_FP001

Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

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