关闭背景特效

IRFR224 [IRF]

Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A); 功率MOSFET （ VDSS = 250V ， RDS（ON） = 1.1ohm ，ID = 3.8A ）

IRFR224


元器件型号：	IRFR224
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A) 功率MOSFET （ VDSS = 250V ， RDS（ON） = 1.1ohm ，ID = 3.8A ）
PDF文件：	总6页 (文件大小：178K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR224参数

IRFR224A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.8A I(D) | TO-252AA

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75 ETC

IRFR224ATF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 FAIRCHILD

IRFR224ATM

暂无描述

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0 FAIRCHILD

IRFR224B

250V N-Channel MOSFET

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87 FAIRCHILD

IRFR224BTF_FP001

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

IRFR224BTM

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

IRFR224BTM

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

IRFR224BTM_FP001

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

IRFR224BTM_NL

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 FAIRCHILD

IRFR224PBF

Power MOSFET

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26 VISHAY

IRFR224PBF

HEXFET Power MOSFET

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36 IRF

IRFR224PBF

Dynamic dv/dt Rating

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17 KERSEMI

IRFR224PBF

Power MOSFET

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6 KERSEMI

IRFR224TR

Power MOSFET

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32 VISHAY

IRFR224TRA

Power MOSFET

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8 KERSEMI

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