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IRFR5505GPBF [IRF]

Ultra Low On-Resistance; 超低导通电阻

IRFR5505GPBF


元器件型号：	IRFR5505GPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Ultra Low On-Resistance 超低导通电阻晶体晶体管开关脉冲
PDF文件：	总10页 (文件大小：1673K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR5505GPBF参数

IRFR5505GTRLPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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1 INFINEON

IRFR5505GTRPBF

ultra low on-resistance

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18 IRF

IRFR5505GTRRPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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1 INFINEON

IRFR5505PBF

ULTRA LOW ON-RESISTANCE

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9 KERSEMI

IRFR5505PBF

Ultra Low On-Resistance

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80 IRF

IRFR5505PBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3

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1 INFINEON

IRFR5505TR

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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0 IRF

IRFR5505TRL

ULTRA LOW ON-RESISTANCE

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24 KERSEMI

IRFR5505TRLPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3

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0 INFINEON

IRFR5505TRLPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3

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1 IRF

IRFR5505TRPBF

Advanced process Technolgy

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67 IRF

IRFR5505TRR

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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0 IRF

IRFR5505TRRPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3

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0 IRF

IRFR6215

Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

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263 IRF

IRFR6215PBF

HEXFET㈢ Power MOSFET

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78 IRF

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