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IRFS38N20D [IRF]

Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A); 功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 0.054ohm ，ID = 44A ）
IRFS38N20D
元器件型号： IRFS38N20D
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 0.054ohm ，ID = 44A ）
PDF文件： 总11页 (文件大小：135K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFS38N20D参数
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IRFS38N20DPBF

 HEXFET Power MOSFET

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61 IRF

IRFS38N20DTRL

 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB

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31 IRF

IRFS38N20DTRLP

 HEXFETPower MOSFET

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40 IRF

IRFS38N20DTRLPBF

 Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2

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1 INFINEON

IRFS38N20DTRLPBF

 Transistor

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0 IRF

IRFS38N20DTRR

 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB

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29 IRF

IRFS38N20DTRRPBF

 Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRFS4010-7PPBF

 HEXFET Power MOSFET

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184 IRF

IRFS4010-7PPBF

 Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7

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18 IRF

IRFS4010PBF

 HEXFET Power MOSFET

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185 IRF

IRFS4010PBF

 Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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5 INFINEON

IRFS4010TRL7PP

 High Efficiency Synchronous Rectification in SMPS

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28 IRF

IRFS4010TRRPBF

 Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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1 INFINEON

IRFS4010TRRPBF

 Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRFS4020PBF

 Key parameters optimized for Class-D audio amplifier applications

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2 IRF
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