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IRFS4410TRRPBF [IRF]

Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3;

IRFS4410TRRPBF


元器件型号：	IRFS4410TRRPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 开关脉冲晶体管
PDF文件：	总12页 (文件大小：799K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFS4410TRRPBF参数

IRFS4410Z

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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0 IRF

IRFS4410Z

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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1 IRF

IRFS4410ZPBF

HEXFET Power MOSFET

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109 IRF

IRFS4410ZPBF

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRFS4410ZPBF

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 INFINEON

IRFS4410ZTRLPBF

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 INFINEON

IRFS4410ZTRRPBF

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRFS450

500V N-Channel MOSFET

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34 FAIRCHILD

IRFS450

500V N-Channel MOSFET

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49 FAIRCHILD

IRFS450A

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.6A I(D) | TO-247VAR

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21 ETC

IRFS450A

Advanced Power MOSFET (500V, 0.4ohm, 9.6A)

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11 FAIRCHILD

IRFS450B

500V N-Channel MOSFET

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32 FAIRCHILD

IRFS451

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 9A I(D) | SOT-186VAR

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15 ETC

IRFS4510PbF

HEXFETPower MOSFET

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41 IRF

IRFS4510TRRPBF

Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3/2

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0 IRF

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