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元器件品牌
IRFS4710PBF
[IRF]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
元器件型号：
IRFS4710PBF
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET
PDF文件：
总12页 (文件大小：664K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFS4710PBF参数
查看货源
IRFS4710TRR
Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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0
IRF
IRFS4710TRRPBF
Power Field-Effect Transistor
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156
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0
INFINEON
IRFS510
Advanced Power MOSFET
Warning
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156
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18
FAIRCHILD
IRFS510
Advanced Power MOSFET
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156
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18
FAIRCHILD
IRFS510A
Advanced Power MOSFET
Warning
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156
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16
FAIRCHILD
IRFS520
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.2A I(D) | SOT-186
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14
ETC
IRFS520A
Advanced Power MOSFET
Warning
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156
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47
FAIRCHILD
IRFS520A
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Warning
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0
SAMSUNG
IRFS521
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.2A I(D) | SOT-186
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18
ETC
IRFS522
Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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0
SAMSUNG
IRFS523
Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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0
SAMSUNG
IRFS52N15D
Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
Warning
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175
IRF
IRFS52N15DHR
Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Warning
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156
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0
IRF
IRFS52N15DPBF
HEXFET Power MOSFET
Warning
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156
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63
IRF
IRFS52N15DTRL
暂无描述
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IRF
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