关闭背景特效

IRFU3709ZPBF [IRF]

HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC ); HEXFET功率MOSFET （ VDSS = 30V ， RDS （ ON）最大值= 6.5米ヘ，的Qg = 17nC ）

IRFU3709ZPBF


元器件型号：	IRFU3709ZPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC ) HEXFET功率MOSFET （ VDSS = 30V ， RDS （ ON）最大值= 6.5米ヘ，的Qg = 17nC ）晶体晶体管功率场效应晶体管开关脉冲
PDF文件：	总12页 (文件大小：267K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU3709ZPBF参数

IRFU3710Z

Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi

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35 IRF

IRFU3710Z

AUTOMOTIVE MOSFET

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33 SHENZHENFREES

IRFU3710Z

AUTOMOTIVE MOSFET

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27 IRF

IRFU3710Z

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

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0 IRF

IRFU3710Z-701PBF

HEXFET Power MOSFET

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13 KERSEMI

IRFU3710Z-701PBF

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

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0 IRF

IRFU3710ZPBF

HEXFET Power MOSFET

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5 KERSEMI

IRFU3710ZPBF

AUTOMOTIVE MOSFET

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33 IRF

IRFU3711

Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A)

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24 IRF

IRFU3711

HEXFETPower MOSFET

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15 SHENZHENFREES

IRFU3711

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3

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0 IRF

IRFU3711PBF

HEXFET Power MOSFET

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17 IRF

IRFU3711PBF

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

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0 INFINEON

IRFU3711Z

HEXFET Power MOSFET

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29 IRF

IRFU3711Z

High Frequency Synchronous Buck Converters for Computer Processor Power

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11 KERSEMI

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