关闭背景特效

IRFU4104PBF [IRF]

HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mヘ , ID = 42A ); HEXFET㈢功率MOSFET （ VDSS = 40V ， RDS （ ON） = 5.5米ヘ， ID = 42A ）

IRFU4104PBF


元器件型号：	IRFU4104PBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mヘ , ID = 42A ) HEXFET㈢功率MOSFET （ VDSS = 40V ， RDS （ ON） = 5.5米ヘ， ID = 42A ）晶体晶体管功率场效应晶体管
PDF文件：	总12页 (文件大小：270K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU4104PBF参数

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A)

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52 IRF

IRFU4105

Ultra Low On-Resistance

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127 KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

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12 KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

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5 KERSEMI

IRFU4105PBF

HEXFET Power MOSFET

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19 IRF

IRFU4105PBF

Power Field-Effect Transistor,

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0 INFINEON

IRFU4105PBF

Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

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0 IRF

IRFU4105Z

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)

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41 IRF

IRFU4105ZPBF

AUTOMOTIVE MOSFET

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20 IRF

IRFU410A

Advanced Power MOSFET

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53 FAIRCHILD

IRFU410ATU

暂无描述

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0 FAIRCHILD

IRFU410B

500V N-Channel MOSFET

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27 FAIRCHILD

IRFU410B

Power Field-Effect Transistor, 0.9A I(D), 500V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

IRFU410BTU

暂无描述

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0 FAIRCHILD

IRFU411

Power Field-Effect Transistor, 0.5A I(D), 450V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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0 SAMSUNG

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