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IRFY240CM [IRF]

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A); 功率MOSFET N沟道（ BVDSS = 200V ， RDS（ON） = 0.18ohm ，ID = 16A）
IRFY240CM
元器件型号： IRFY240CM
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)
功率MOSFET N沟道（ BVDSS = 200V ， RDS（ON） = 0.18ohm ，ID = 16A）
PDF文件： 总6页 (文件大小：252K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFY240CM参数
 查看货源

IRFY240CMPBF

 暂无描述

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0 IRF

IRFY240CMSCXPBF

 暂无描述

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0 IRF

IRFY240CSCS

 Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,

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0 INFINEON

IRFY240M

 N-Channel

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46 ETC

IRFY240M

 N-Channel MOSFET in a Hermetically sealed

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12 SEME-LAB

IRFY240M

 N-CHANNEL POWER MOSFET

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27 SEME-LAB

IRFY240MEA

 暂无描述

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0 IRF

IRFY240MEAPBF

 Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY240MEBPBF

 Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY240MECPBF

 Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY240MEDPBF

 Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY240MEPBF

 暂无描述

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0 IRF

IRFY310

 N-Channel MOSFET in a Hermetically sealed

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11 SEME-LAB

IRFY310

 N-Channel

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12 ETC

IRFY310C

 N-Channel

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10 ETC
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