IRFY9130C [INFINEON]
POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHANNEL HEXFET㈢ MOSFET TECHNOLOGY; 功率MOSFET直通孔（ TO- 257AA ） 100V ，P沟道MOSFET HEXFET㈢科技
| 型号： | IRFY9130C |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHANNEL HEXFET㈢ MOSFET TECHNOLOGY |
| 文件： | 总7页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91293B
IRFY9130C,IRFY9130CM
100V, P-CHANNEL
POWER MOSFET
THRU-HOLE (TO-257AA)
HEXFET® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
ID
Eyelets
IRFY9130C
0.3 Ω
0.3 Ω
-11.2A Ceramic
-11.2A Ceramic
IRFY9130CM
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Ideally Suited For Space Level
Applications
Absolute Maximum Ratings
Parameter
Units
I
@ V
= -10V, T = 25°C
Continuous Drain Current
-11.2
-7.1
D
GS
C
A
I
D
@ V
= -10V, T = 100°C Continuous Drain Current
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
-44
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
400
mJ
A
AS
I
-11.2
7.5
AR
E
AR
dv/dt
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
mJ
V/ns
-5.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300(0.063in./1.6mm from case for 10 sec)
4.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
4/18/01
IRFY9130C, IRFY9130CM
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.1
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.30
Ω
V
= -10V, I = -7.1A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
2.5
—
—
—
—
—
-4.0
—
V
V
= V , I = -250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> -15V, I
= -7.1A ➀
DS
V
DS
I
-25
-250
= -80V ,V =0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
30
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -10V, I = -11.2A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
7.1
2.1
60
V
= -50V
DS
t
t
t
t
V
DD
= -50V, I = -11.2A,
D
140
140
140
—
R
= 7.5Ω
G
ns
d(off)
f
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
L
+ L
Total Inductance
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
800
350
125
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-11.2
-44
-4.7
250
3.0
S
A
SM
V
T = 25°C, I = -11.2A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
µC
T = 25°C, I = -11.2A, di/dt ≤ -100A/µs
j
F
Q
Reverse Recovery Charge
V
≤ -50V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-sink
—
—
—
—
0.21
—
1.67
—
thJC
thCS
thJA
°C/W
Junction-to-Ambient
80
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFY9130C, IRFY9130CM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
ID=-11.2A
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRFY9130C, IRFY9130CM
ID=-11.2A
3a
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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IRFY9130C, IRFY9130CM
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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5
IRFY9130C, IRFY9130CM
L
V
DS
D.U.T
R
G
V
DD
I
A
AS
DRIVER
-10V
-20V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-10V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFY9130C, IRFY9130CM
Foot Notes:
➀➀ I
SD
≤ -11.2A, di/dt ≤ -140A/µs,
≤ -100V, T ≤ 150°C
➀➀ Repetitive Rating; Pulse width limited by
V
maximum junction temperature.
DD
J
➀➀➀V
= -25V, starting T = 25°C, L= 6.4mH
DD
J
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I = -11.2A, V
GS
= -10V
L
Case Outline and Dimensions —TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
www.irf.com
7
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