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IRFY9130MEB [IRF]

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB;
IRFY9130MEB
元器件型号： IRFY9130MEB
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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PDF文件： 总7页 (文件大小：164K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFY9130MEB参数
 查看货源

IRFY9130MEBPBF

 暂无描述

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0 IRF

IRFY9130MEDPBF

 Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9140

 POWER MOSFET THRU-HOLE (TO-257AA)

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39 IRF

IRFY9140

 Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRFY9140

 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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25 SEME-LAB

IRFY9140C

 POWER MOSFET THRU-HOLE (TO-257AA)

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15 IRF

IRFY9140C

 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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18 SEME-LAB

IRFY9140CM

 POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)

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30 IRF

IRFY9140CM

 POWER MOSFET THRU-HOLE (TO-257AA)

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15 IRF

IRFY9140CMPBF

 Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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-
0 IRF

IRFY9140CMSCX

 Power Field-Effect Transistor, 15.8A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

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-
0 IRF

IRFY9140CMSCXPBF

 Power Field-Effect Transistor, 15.8A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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-
0 IRF

IRFY9140CPBF

 Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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-
1 IRF

IRFY9140CSCSPBF

 Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9140CSCVPBF

 Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF
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