IRFZ48ZSTRRPBF [IRF]

Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3;
IRFZ48ZSTRRPBF
型号: IRFZ48ZSTRRPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

文件: 总13页 (文件大小:283K)
下载:  下载PDF数据表文档文件

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Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, FULL PACK-3

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0 IRF

IRG41BC20KDPBF

Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, FULL PACK-3

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0 IRF

IRG41BC30UD

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8.9A I(C) | TO-220FP

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189 ETC

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41 ETC

IRG4BAC50SPBF

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN

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0 IRF

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31 ETC

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47 ETC

IRG4BAC50WPBF

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN

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0 IRF

IRG4BC10K

Short Circuit Rated UltraFast IGBT

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76 IRF

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)

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76 IRF

IRG4BC10KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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22 IRF

IRG4BC10KPBF

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

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0 IRF

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INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)

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54 IRF

IRG4BC10SD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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32 IRF

IRG4BC10SD

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB

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56 ETC