IRG4BC30U [IRF]

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A); 绝缘栅双极晶体管( VCES = 600V ,的VCE(on )典型值= 1.95V , @ VGE = 15V , IC = 12A)
IRG4BC30U
型号: IRG4BC30U
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
绝缘栅双极晶体管( VCES = 600V ,的VCE(on )典型值= 1.95V , @ VGE = 15V , IC = 12A)

晶体 晶体管 栅
文件: 总8页 (文件大小:169K)
下载:  下载PDF数据表文档文件

IRG4BC30UD

Fit Rate / Equivalent Device Hours

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73 IRF

IRG4BC30UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

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224 IRF

IRG4BC30UD

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

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13 IRF

IRG4BC30UDHR

暂无描述

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1 IRF

IRG4BC30UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT

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52 IRF

IRG4BC30UPBF

UltraFast Speed IGBT

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35 IRF

IRG4BC30US

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)

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48 IRF

IRG4BC30U-S

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)

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53 IRF

IRG4BC30U-SPBF

INSULATED GATE BIPOLAR TRANSISTOR

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18 IRF

IRG4BC30U-SPBF

INSULATED GATE BIPOLAR TRANSISTOR

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21 IRF

IRG4BC30U-STRL

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

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0 IRF

IRG4BC30U-STRLPBF

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRG4BC30U-STRRPBF

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRG4BC30U-STRRPBF

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRG4BC30W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

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58 IRF